biblio_iivi.bib

@article{iivi:11,
author={V.A. Kaygorodov and I.V. Sedova and S.V. Sorokin and A.A. Sitnikova and O.V. Nekrutkina and T.V. Shubina
        and A.A. Toropov and V.S. Sorokin and S.V. Ivanov},
title={{Molecular Beam Epitaxy of Low-Strained CdSe/CdMgSe Heterostructures on InAs(001) Substrates}},
journal=PSSB,
volume={229},
pages={19-23},
year={2002},
doi={10.1002/1521-3951(200201)229:1<19::AID-PSSB19>3.0.CO;2-J},
}

@article{iivi:12,
author = {N. Samarth and H. Luo and J. K. Furdyna and S. B. Qadri and Y. R. Lee and A. K. Ramdas and N. Otsuka},
collaboration = {},
title = {{Growth of cubic (zinc blende) CdSe by molecular beam epitaxy}},
publisher = {AIP},
year = {1989},
journal = APL,
volume = {54},
number = {26},
pages = {2680-2682},
keywords = {ENERGY GAP; REFLECTIVITY; MOLECULAR BEAM EPITAXY; CADMIUM SELENIDES; LATTICE PARAMETERS; THIN FILMS; EPITAXIAL LAYERS},
url = {http://link.aip.org/link/?APL/54/2680/1},
doi = {10.1063/1.101033}
}

@article{iivi:13,
author={Hiroyuki Okuyama, Kazushi Nakano, Takao Miyajima and Katsuhiro Akimoto},
title={{Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy}},
journal=JJAP,
volume={30},
pages={L1620-L1623},
year={1991},
doi={10.1143/JJAP.30.L1620},
}

@article{iivi:15,
title = {{Epitaxy of Zn\sub{1-x}Mg\sub{x}Se\sub{y}Te\sub{1-y} on (100)InAs}},
journal = JCG,
volume = "159",
number = "1-4",
pages = "54 - 57",
year = "1996",
note = "Proceedings of the seventh international conference on II-VI compouds and devices",
issn = "0022-0248",
doi = "10.1016/0022-0248(95)00881-0",
url = "http://www.sciencedirect.com/science/article/B6TJ6-3VRW2G3-3T/2/695bb85e42d7f07198a553a24268532f",
author = "M. Th. Litz and K. Watanabe and M. Korn and H. Ress and U. Lunz and W. Ossau and A. Waag and G. Landwehr and Th. Walter and B. Neubauer and D. Gerthsen and U. Schüssler"
}

@article{iivi:16,
author = {Yasantha Rajakarunanayake and Mark C. Phillips and James O. McCaldin and David H. Chow and D. A. Collins and Thomas C. McGill, Jr.},
editor = {Anupam Madhukar},
collaboration = {},
title = {{Band alignment of Zn\sub{1-x}Cd\sub{x}Te/ZnTe and ZnTe\sub{1-x}Se\sub{x}/ZnTe strained layer superlattices}},
publisher = {SPIE},
year = {1990},
journal = {Proc. SPIE},
volume = {1285},
number = {1},
pages = {142-151},
location = {San Diego, CA, USA},
url = {http://link.aip.org/link/?PSI/1285/142/1},
doi = {10.1117/12.20829}
}

@article{iivi:16b,
author = {Y. Rajakarunanayake and R. H. Miles and G. Y. Wu and T. C. McGill},
collaboration = {},
title = {{Band offset of the ZnSe--ZnTe superlattices: A fit to photoluminescence data by \textbf{k} \bullet \textbf{p} theory}},
publisher = {AVS},
year = {1988},
journal = JVSTB,
volume = {6},
number = {4},
pages = {1354-1359},
keywords = {ENERGY GAP; VALENCE BANDS; PHOTOLUMINESCENCE; SUPERLATTICES; ZINC SELENIDES; ZINC TELLURIDES; INTERFACE STATES; BAND STRUCTURE},
url = {http://link.aip.org/link/?JVB/6/1354/1},
doi = {10.1116/1.584220}
}

@article{iivi:17,
title = {{Type I--type II band offset transition of the ZnMgSe--ZnTe system}},
journal = JCG,
volume = "146",
number = "1-4",
pages = "418 - 421",
year = "1995",
note = "Vapour Growth and Epitaxy 1994",
issn = "0022-0248",
doi = "10.1016/0022-0248(94)00495-1",
url = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5FVM5-2P/2/529520af913c305321e494495fb6d070",
author = "S. O. Ferreira and H. Sitter and W. Faschinger and R. Krump and G. Brunthaler"
}

@article{iivi:18,
author = {M. W. Wang and J. F. Swenberg and M. C. Phillips and E. T. Yu and J. O. McCaldin and R. W. Grant and T. C. McGill},
collaboration = {},
title = {{X--ray photoelectron spectroscopy measurement of valence--band offsets for Mg--based semiconductor compounds}},
publisher = {AIP},
year = {1994},
journal = APL,
volume = {64},
number = {25},
pages = {3455-3457},
keywords = {SEMICONDUCTOR MATERIALS; MAGNESIUM COMPOUNDS; VALENCE BANDS; PHOTOELECTRON SPECTROSCOPY; MOLECULAR BEAM EPITAXY; BINDING ENERGY; CORE LEVELS; LEVELS; LIGHT EMITTING DIODES; MAGNESIUM SELENIDES; ZINC SELENIDES; CADMIUM SELENIDES; TERNARY ALLOYS; MAGNESIUM TELLURIDES; ZINC TELLURIDES; CADMIUM TELLURIDES},
url = {http://link.aip.org/link/?APL/64/3455/1},
doi = {10.1063/1.111239}
}


@Article{iivi:25,
  title = {{Reflectivity of ZnSe\sub{x}Te\sub{1-x} Single Crystals}},
  author = {Ebina, Atsuko  and Yamamoto, Mitsuo  and Takahashi, Tadashi },
  journal = PRB,
  volume = {6},
  number = {10},
  pages = {3786-3791},
  numpages = {5},
  year = {1972},
  month = {Nov},
  doi = {10.1103/PhysRevB.6.3786},
  publisher = {American Physical Society}
}

@article{iivi:26,
author = {M. W. Wang and J. F. Swenberg and M. C. Phillips and E. T. Yu and J. O. McCaldin and R. W. Grant and T. C. McGill},
collaboration = {},
title = {{X--ray photoelectron spectroscopy measurement of valence--band offsets for Mg--based semiconductor compounds}},
publisher = {AIP},
year = {1994},
journal = APL,
volume = {64},
number = {25},
pages = {3455-3457},
keywords = {SEMICONDUCTOR MATERIALS; MAGNESIUM COMPOUNDS; VALENCE BANDS; PHOTOELECTRON SPECTROSCOPY; MOLECULAR BEAM EPITAXY; BINDING ENERGY; CORE LEVELS; LEVELS; LIGHT EMITTING DIODES; MAGNESIUM SELENIDES; ZINC SELENIDES; CADMIUM SELENIDES; TERNARY ALLOYS; MAGNESIUM TELLURIDES; ZINC TELLURIDES; CADMIUM TELLURIDES},
url = {http://link.aip.org/link/?APL/64/3455/1},
doi = {10.1063/1.111239}
}

@Article{iivi:27,
  title = {{Investigation of band masses and g values of ZnSe by two--photon magnetoabsorption}},
  author = {H\"olscher, H. W. and N\"othe, A.  and Uihlein, Ch. },
  journal = PRB,
  volume = {31},
  number = {4},
  pages = {2379-2387},
  numpages = {8},
  year = {1985},
  month = {Feb},
  doi = {10.1103/PhysRevB.31.2379},
  publisher = {American Physical Society}
}

@Article{iivi:28,
  title = {{Relation between Elastic Tensors of Wurtzite and Zinc--Blende Structure Materials}},
  author = {Martin, Richard M.},
  journal = PRB,
  volume = {6},
  number = {12},
  pages = {4546-4553},
  numpages = {7},
  year = {1972},
  month = {Dec},
  doi = {10.1103/PhysRevB.6.4546},
  publisher = {American Physical Society}
}

@Article{iivi:29,
  title = {Valence--band parameters and $g$ factors of cubic zinc selenide derived from free--exciton magnetoreflectance},
  author = {Venghaus, H. },
  journal = PRB,
  volume = {19},
  number = {6},
  pages = {3071--3082},
  numpages = {11},
  year = {1979},
  month = {Mar},
  doi = {10.1103/PhysRevB.19.3071},
  publisher = {American Physical Society}
}

@Article{iivi:30,
  title = {{Excitons and polaritons in ZnSe}},
  author = {Sermage, Bernard  and Fishman, Guy },
  journal = PRB,
  volume = {23},
  number = {10},
  pages = {5107-5118},
  numpages = {11},
  year = {1981},
  month = {May},
  doi = {10.1103/PhysRevB.23.5107},
  publisher = {American Physical Society}
}

@article{iivi:31,
author = {D. T. F. Marple},
collaboration = {},
title = {{Electron Effective Mass in ZnSe}},
publisher = {AIP},
year = {1964},
journal = JAP,
volume = {35},
number = {6},
pages = {1879-1882},
url = {http://link.aip.org/link/?JAP/35/1879/1},
doi = {10.1063/1.1713761}
}

@Article{iivi:32,
  title = {{First--principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. I. Self-consistent energy bands, charge densities, and effective masses}},
  author = {Wang, C. S. and Klein, B. M.},
  journal = PRB,
  volume = {24},
  number = {6},
  pages = {3393-3416},
  numpages = {23},
  year = {1981},
  month = {Sep},
  doi = {10.1103/PhysRevB.24.3393},
  publisher = {American Physical Society}
}

@article{iivi:33,
author = {S. Shokhovets and O. Ambacher and G. Gobsch},
collaboration = {},
title = {{Conduction--band dispersion relation and electron effective mass in III--V and II--VI zinc--blende semiconductors}},
publisher = {APS},
year = {2007},
journal = PRB,
volume = {76},
number = {12},
eid = {125203},
numpages = {18},
pages = {125203},
keywords = {cadmium compounds; conduction bands; dielectric function; dispersion relations; effective mass; electron density; gallium arsenide; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; zinc compounds},
url = {http://link.aps.org/abstract/PRB/v76/e125203},
doi = {10.1103/PhysRevB.76.125203}
}

@article{iivi:34,
title={{Cd(Mg)Se Single Layers and CdSe/CdMgSe Heterostructures Grown by Molecular Beam Epitaxy on InAs(001) Substrates}},
author={I.V. Sedova, O.V. Nekrutkina, S.V. Sorokin, T.V. Shubina, A.A. Toropov and S.V. Ivanov},
journal={Acta Phys. Pol. A},
volume={100},
pages={443},
year={2001},
}


@Article{iivi:22,
  title = {{Excitons and the Absorption Edge in ZnSe}},
  author = {Hite, G. E. and Marple, D. T. F. and Aven, M.  and Segall, B. },
  journal = PR,
  volume = {156},
  number = {3},
  pages = {850-859},
  numpages = {9},
  year = {1967},
  month = {Apr},
  doi = {10.1103/PhysRev.156.850},
  publisher = {American Physical Society}
}

@Article{iivi:19,
  title = {{Excitonic properties of Zn\sub{1-x}Cd\sub{x}Se/ZnSe strained quantum wells}},
  author = {Pellegrini, V.  and Atanasov, R.  and Tredicucci, A.  and Beltram, F.  and Amzulini, C.  and Sorba, L.  and Vanzetti, L.  and Franciosi, A. },
  journal = PRB,
  volume = {51},
  number = {8},
  pages = {5171-5175},
  numpages = {4},
  year = {1995},
  month = {Feb},
  doi = {10.1103/PhysRevB.51.5171},
  publisher = {American Physical Society}
}

@Article{iivi:21b,
  title = {{Valence--Band Parameters in Cubic Semiconductors}},
  author = {Lawaetz, P. },
  journal = PRB,
  volume = {4},
  number = {10},
  pages = {3460-3467},
  numpages = {7},
  year = {1971},
  month = {Nov},
  doi = {10.1103/PhysRevB.4.3460},
  publisher = {American Physical Society}
}

@Article{iivi:21,
  title = {{Band structure of ZnSe--ZnTe superlattices}},
  author = {Rajakarunanayake, Y.  and Miles, R. H. and Wu, G. Y. and McGill, T. C.},
  journal = PRB,
  volume = {37},
  number = {17},
  pages = {10212-10215},
  numpages = {3},
  year = {1988},
  month = {Jun},
  doi = {10.1103/PhysRevB.37.10212},
  publisher = {American Physical Society}
}

@article{iivi:35,
  author={K L Teo and Y P Feng and M F Li and T C Chong and J B Xia},
  title={{Band structure of Mg\sub{1-x}Zn\sub{x}S\sub{y}Se\sub{1-y}}},
  journal=SST,
  volume={9},
  number={4},
  pages={349-355},
  url={http://stacks.iop.org/0268-1242/9/349},
  year={1994},
  doi={10.1088/0268-1242/9/4/003}
}

%%%%%%%%%%%%%%%%%%

@article{lozykowski:3235,
author = {H. J. Lozykowski and V. K. Shastri},
collaboration = {},
title = {Excitonic and Raman properties of ZnSe/Zn[sub 1 - x]Cd[sub x]Se strained-layer quantum wells},
publisher = {AIP},
year = {1991},
journal = {Journal of Applied Physics},
volume = {69},
number = {5},
pages = {3235-3242},
keywords = {ZINC SELENIDES; CADMIUM SELENIDES; EXCITONS; RAMAN EFFECT; QUANTUM WELL STRUCTURES; PHOTOLUMINESCENCE; OPTICAL PHONONS; ENERGY GAP},
url = {http://link.aip.org/link/?JAP/69/3235/1},
doi = {10.1063/1.348543}
}

@article{lee:2984,
author = {B. H. Lee},
collaboration = {},
title = {Elastic Constants of ZnTe and ZnSe between 77[degree]--300[degree]K},
publisher = {AIP},
year = {1970},
journal = {Journal of Applied Physics},
volume = {41},
number = {7},
pages = {2984-2987},
url = {http://link.aip.org/link/?JAP/41/2984/1},
doi = {10.1063/1.1659349}
}

@Article{PhysRevB.44.11307,
  title = {Pressure tuning of strains in semiconductor heterostructures: (ZnSe epilayer)/(GaAs epilayer)},
  author = {Rockwell, Benjamin  and Chandrasekhar, H. R. and Chandrasekhar, Meera  and Ramdas, A. K. and Kobayashi, M.  and Gunshor, R. L.},
  journal = {Phys. Rev. B},
  volume = {44},
  number = {20},
  pages = {11307--11314},
  numpages = {7},
  year = {1991},
  month = {Nov},
  doi = {10.1103/PhysRevB.44.11307},
  publisher = {American Physical Society}
}

@article{boley:4136,
author = {Mark S. Boley and Robert J. Thomas and Meera Chandrasekhar and H. R. Chandrasekhar and A. K. Ramdas and M. Kobayashi and R. L. Gunshor},
collaboration = {},
title = {Pressure tuning of strain in CdTe/InSb epilayer: A photoluminescence and photomodulated reflectivity study},
publisher = {AIP},
year = {1993},
journal = {Journal of Applied Physics},
volume = {74},
number = {6},
pages = {4136-4144},
keywords = {CADMIUM TELLURIDES; INDIUM ANTIMONIDES; STRAINS; PRESSURE EFFECTS; PHOTOLUMINESCENCE; REFLECTIVITY; EXCITONS; MOLECULAR BEAM EPITAXY; HOLES; VERY HIGH PRESSURE; PHASE TRANSFORMATIONS; HYDROSTATIC PRESSURE},
url = {http://link.aip.org/link/?JAP/74/4136/1},
doi = {10.1063/1.354415}
}

@article{Wei:APL:1998,
author = {Su-Huai Wei and Alex Zunger},
collaboration = {},
title = {Calculated natural band offsets of all II--VI and III--V semiconductors: Chemical trends and the role of cation d orbitals},
publisher = {AIP},
year = {1998},
journal = {Appl. Phys. Lett.},
volume = {72},
number = {16},
pages = {2011-2013},
keywords = {SEMICONDUCTOR MATERIALS; ELECTRONIC STRUCTURE; ANIONS; CATIONS; HETEROJUNCTIONS; INTERFACES; ENERGY GAP; GALLIUM NITRIDES; ZINC SULFIDES; GALLIUM PHOSPHIDES; CADMIUM SULFIDES; MERCURY SELENIDES; II-VI semiconductors; III-V semiconductors; band structure; band theory; valence bands},
url = {http://link.aip.org/link/?APL/72/2011/1},
doi = {10.1063/1.121249}
}